Regensburg 2016 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 73: Heterostructures and Interfaces (Joint session of HL and O, organized by HL)

HL 73.9: Talk

Thursday, March 10, 2016, 12:00–12:15, H17

Disorder and Interface Properties in III-N-V-quantum wells — •Sebastian Gies, Sarah Karrenberg, Tatjana Wegele, Phillip Springer, Christian Fuchs, Andreas Beyer, Martin Zimprich, Wolfgang Stolz, Kerstin Volz, Stephan W. Koch, and Wolfram Heimbrodt — Philipps-University Marburg, 35032 Marburg, Germany

Nitrogen containing quantum well (QW) structures are an interesting material for solar cells and lasers. Because of the band anticrossing between the N-impurity and the GaAs conduction band the band gap is pushed towards 1.55 µm. Otherwise N introduces a huge disorder. The influence of this disorder on QW-interfaces (IF) and optical properties is scarcely studied. However, IFs are an important part of any device and influence strongly the charge carrier confinement and the transport properties. We investigate the quaternary Ga(NAsP) pseudomorphically grown on silicon. This material is a promising light source for optoelectronic integration on silicon. The important disorder parameters are revealed using photoluminescence (PL) spectroscopy, while the material’s structure is characterized via transmission electron microscopy and X-ray diffraction. The conjunction of these methods allows us to uncover the complex interplay between N-incorporation and optical and structural properties. Furthermore, type-II excitons in (GaIn)As/Ga(NAs)-heterostructures are studied. The conjunction of experiment and microscopic theory allows us not only to determine the band alignment in the heterostructures, but also to directly analyze the influence of the IF on disorder and optical properties.