Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 77: Graphene III: Electronic Properties

HL 77.7: Vortrag

Donnerstag, 10. März 2016, 12:00–12:15, S053

Graphene wrinkles: their conductivity, crystallinity, and reactivity — •Raul D. Rodriguez^1,2, Tao Zhang³, Jana Kalbacova^1,2, Devang Parmar¹, Akhil Nair¹, Zoheb Khan¹, Mahfujur Rahaman¹, Ihsan Amin², Jacek Gasiorowski¹, Evgeniya Sheremet¹, Rainer Jordan², Michael Hietschold¹, and Dietrich R.T. Zahn^1,2 — ¹Institut für Physik, Technische Universität Chemnitz, Chemnitz 09107, Germany — ²Center for Advancing Electronics Dresden (cfaed), Germany — ³Professur für Makromolekulare Chemie, Department Chemie, Technische Universität Dresden, Mommsenstrasse 4, 01062 Dresden, Germany

Wrinkles appear to be unavoidable in graphene produced by chemical vapor deposition (CVD) on copper. Despite its generality, isolating the role of wrinkles on overall electrical conductivity, crystallinity, and chemical reactivity of CVD-grown graphene remains an open issue. We investigate the reactivity of basal planes and wrinkles in graphene with polystyrene bromide (PSBr) and correlate it with electrical con- ductivity, defect concentration, and doping with a special resolution from the micro- to the nano-scale. We show that wrinkles dominate the chemical reactivity of CVD graphene, and moreover, that doping with the same functionality can yield opposite electronic type to the basal plane regions (n- vs. p-type). These results expand our under- standing of wrinkles in CVD graphene towards engineering for novel applications.