Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 78: 2D Materials beyond Graphene: Dynamics and Excitation

HL 78.5: Vortrag

Donnerstag, 10. März 2016, 11:45–12:00, S054

Scanning tunneling light emission from single layer MoS₂ — •Christian Lotze, Nils Krane, Julia Läger, Gaël Reecht, and Katharina J. Franke — FU Berlin, FB Physik, Arnimallee 14, 14195 Berlin

Transition-metal dichalcogenides form a group of interesting 2d materials. Among them, the semiconductor MoS₂ has attracted great interest, because it has been shown that it turns from an indirect-gap into a direct-gap semiconductor when reduced to a single layer [1]. As such, potential applications involve its usage for instance as light emitting device.

Here, we present a combined low temperature scanning tunneling (STM) and light emission (LE) study on MoS₂/Au(111). The STM geometry allows to locally inject electrons or holes with the tip into the single layer MoS₂. Inelastically tunneling electrons and holes can give rise to emission of photons [2,3]. Here, we detect and analyze spectrally resolved the electroluminescence from the MoS₂ monolayer on Au(111). We correlate these LE spectra with the electronic structure, that we obtained from scanning tunneling spectroscopy. Moreover we will look into the spatial variation of the LE signals and the role of defect sites.

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