Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 82: Semiconductor Lasers II

HL 82.2: Vortrag

Donnerstag, 10. März 2016, 15:00–15:15, H13

InP-based tunable narrow linewidth laser array for use as local oscillator in coherent communication — •Annette Becker¹, Vitalii Sichkovskyi¹, Marko Bjelica², Florian Schnabel¹, Anna Rippien¹, Bernd Witzigmann², and Johann Peter Reithmaier¹ — ¹Institut für Nanostrukturtechnologie und Analytik, CINSaT, Universität Kassel, Deutschland — ²Computational Electronics and Photonics, CINSaT, Universität Kassel, Deutschland

Reference lasers are a key element for high-capacitance coherent optical communication. These lasers need to be narrow linewidth widely tunable DFB lasers.

InP based quantum dot (QD) material developed for 1.55 µm enables tailoring of device properties, like low linewidth enhancement factor (α-factor) favourable for such an application. Theoretical considerations taking into account the quasi zero-dimensional nature of the active zone, clearly predict a strong reduction of the laser linewidth by appropriate tailoring the QD material design.

By adjusting growth parameters and QD layer numbre, the gain function could be tailored to be more symmetric, resulting in considerable reduction of the α-factor. Intrinsic linewidths of less than 200 kHz could be achieved. By arranging the lasers in an array, the tuning range could be extended to meet the demands of coherent communication systems.