HL 83: Focus Session: Functionalization of Semiconductors II
Donnerstag, 10. März 2016, 14:45–17:15, H16
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14:45 |
HL 83.1 |
Hauptvortrag:
Electronic properties and applications of functionalized wide gap semiconductors — •Martin Stutzmann
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15:15 |
HL 83.2 |
Frequency Conversion Properties of SnS-Clusters — •Nils W. Rosemann, Jens Eußner, Ulrich Huttner, Andreas Beyer, Kerstin Volz, Stephan W. Koch, Mackillo Kira, Stefanie Dehnen, and Sangam Chatterjee
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15:30 |
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30 min. Coffee Break
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16:00 |
HL 83.3 |
Functionalization of III/V semiconductor surfaces with small organic molecules — •Patrick Vogt
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16:30 |
HL 83.4 |
Diethyl Ether on Si(001) - An Experimental Study on Adsorption Configurations and Energy Barriers — •Marcel Reutzel, Gerson Mette, Marcus Lipponer, Michael Dürr, and Ulrich Höfer
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16:45 |
HL 83.5 |
Ab initio study on precursor reactivity in CVD growth: GaP on Si — •Andreas Stegmüller and Ralf Tonner
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17:00 |
HL 83.6 |
In situ controlled MOVPE-preparation of As-modified Si(100) surfaces and single-domain GaP heteroepitaxy — •Oliver Supplie, Matthias M. May, Agnieszka Paszuk, Andreas Nägelein, Peter Kleinschmidt, Sebastian Brückner, and Thomas Hannappel
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