Regensburg 2016 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 83: Focus Session: Functionalization of Semiconductors II
HL 83.4: Vortrag
Donnerstag, 10. März 2016, 16:30–16:45, H16
Diethyl Ether on Si(001) - An Experimental Study on Adsorption Configurations and Energy Barriers — •Marcel Reutzel1, Gerson Mette1, Marcus Lipponer1, Michael Dürr1,2, and Ulrich Höfer1 — 1Philipps-Universität, 35037 Marburg — 2Justus-Liebig Universität, 34392 Gießen
The functionalization of semiconductor surfaces with organic molecules has attracted much interest, especially with respect to the challenges arising from the miniaturization in semiconductor device physics. It is thus important to understand the basic adsorption processes of different functional groups on these surfaces.
Here, we present an experimental study of the adsorption configurations and the underlying potential energy curve of diethyl ether on Si(001): At low temperature, diethyl ether adsorbs in a datively bonded intermediate state, as observed by means of STM and XPS experiments. By thermal activation, the ether is cleaved; covalently attached Si-C2H5 and Si-O-C2H5 fragments are observed on two neighboring dimer rows [J. Phys. Chem. C 119, 6018 (2015)]. Using optical second-harmonic generation, the surface mediated ether cleavage reaction was followed in realtime. Conversion rates were measured as a function of surface temperature; the barrier єa=0.38±0.05 eV (νa=104±1 s−1) was determined. Using molecular beam techniques, the initial sticking probability was measured as a function of surface temperature. From the difference between binding energy єd and conversion barrier єa, the binding energy єd=0.62±0.08 eV (νd =107±1.3 s−1) was determined [J. Phys. Chem. Lett. 6, 3971 (2015)].