Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 84: Novel Functional Materials I

HL 84.3: Vortrag

Donnerstag, 10. März 2016, 15:30–15:45, H17

Highly Mismatched GaAs1-xNx and Ge1-xSnx Alloys Prepared by Ion Implantation and Ultrashort Annealing — •Shengqiang Zhou — Helmholtz-Zentrum Dresden Rossendorf, Dresden, Germany

Doping allows us to modify semiconductor materials for desired properties such as conductivity, bandgap, and/or lattice parameter. A small portion replacement of the highly mismatched isoelectronic dopants with the host atoms of a semiconductor can result in drastic variation of its structural, optical, and/or electronic properties. Here, the term 'mismatch' describes the properties of atom size, ionicity, and/or electronegativity. In this talk, we present the fabrication of two kinds of highly mismatched semiconductor alloys, i.e., Ge1-xSnx [1] and GaAs1-xNx [2]. The results suggest an efficient above-solubility doping induced by non-equilibrium methods of ion implantation and ultrashort annealing. Pulsed laser melting promotes the regrowth of monocrystalline Ge1-xSnx, whereas flash lamp annealing brings about the formation of high quality GaAs1-xNx with room temperature photoluminescence. The bandgap modification of Ge1-xSnx and GaAs1-xNx has been verified by optical measurements of spectroscopic ellipsometry and photoluminescence, respectively. In addition, effective defect engineering in GaAs has been achieved by flash lamp annealing, by which a quasi-temperature-stable photoluminescence at 1.3 um has been obtained [3, 4]. [1] K. Gao, et al., APL 105, 042107 (2014); [2] K. Gao, et al., APL 105, 012107 (2014); [3] K. Gao, et al., JAP 114, 093511 (2013); [4] S. Prucnal, et al., Opt. Express, 20, 26075 (2012).