Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 84: Novel Functional Materials I

HL 84.4: Vortrag

Donnerstag, 10. März 2016, 15:45–16:00, H17

Disentangling bulk from surface contributions in the electronic structure of black phosphorus — •Evangelos Golias, Maxim Krivenkov, and Jaime Sánchez-Barriga — Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein Str. 15, 12489 Berlin, Germany

Most recently, black phosphorus (BP) has come into focus as a promising material for future applications in nanoelectronic devices due to its unique electronic and transport properties. Here, we use angle-resolved photoemission spectroscopy (ARPES) in conjunction with ab-initio calculations within the framework of density-functional theory (DFT) to disentangle surface from the bulk contributions in the electronic structure of BP. We find good agreement between our theoretical predictions for the intra and interlayer energy-momentum dispersions and the experimentally obtained three-dimensional band structure of this material. Our results provide compelling evidence for the existence of surface-resonant states near the top of the valence band which can play an important role in the performance of electronic devices based on BP.