Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 90: Poster III
HL 90.1: Poster
Donnerstag, 10. März 2016, 16:00–19:00, Poster A
In Situ Raman Spectroscopy for the Characterization of Plasma Textured Black Silicon — •Maria Gaudig1,2, Jens Hirsch1,3, Dominik Lausch3, Paul-T. Miclea2,3, Alexander N. Sprafke2, Norbert Bernhard1,3, and Ralf B. Wehrspohn2,4 — 1Anhalt University of Applied Sciences, Technologies of Photovoltaics Group, Bernburger Str. 55, D-06366 Köthen — 2Martin Luther University Halle-Wittenberg, Institute of Physics, Group mikroMD, Heinrich-Damerow-Str. 4, D-06120 Halle (Saale) — 3Fraunhofer Center for Silicon Photovoltaics CSP, Otto-Eißfeldt-Straße 12, D-06120 Halle (Saale) — 4Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Str. 1, D-06120 Halle (Saale)
Black silicon (b-Si) promises with its extremely low reflectivity to become a real alternative to wet chemical textured silicon in the PV industry. In this work, the nano texturing is realized with a maskless SF6/O2 plasma etch process. We showed different plasma textures with absorption about 95 % and effective lifetimes in the microsecond, which is adequate for solar cells. However, the physical understanding behind the b-Si formation is still insufficient. To clarify the creation of these small nano-needles by a maskless process, we applied Raman spectroscopy, which provides information about the surface roughness, stress or amorphous silicon formation and the chemical composition on the surface. A Raman probe is constructed inside the plasma etch chamber. Transient Raman spectra were measured and evaluated. In this contribution, we will show the results of these in situ measurements and our conclusions concerning the b-Si formation.