Regensburg 2016 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 90: Poster III
HL 90.23: Poster
Thursday, March 10, 2016, 16:00–19:00, Poster A
Transient localization in rubrene — •Michael Geiger1, Andrea Rohwer1, Martin Dressel1, Ute Zschieschang2, Hagen Klauk2, Teresa Schmeiler3, and Jens Pflaum3 — 11. Physikalisches Institut, Universität Stuttgart, Germany — 2Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany — 3Experimentelle Physik VI, Universität Würzburg, Germany
Rubrene single crystals consist of van der Waals bound polycyclic aromatic hydrocarbons. Intrinsically, rubrene is an insulator, but can become conductive by e.g. field-effect doping. As such rubrene single crystals have shown highest room-temperatur hole mobilities of about 20 cm2/Vs. Due to these properties rubrene has gained attention over the last years and appears to be a promising candidate for electronic applications such as field effect transistors (FETs) in active matrix displays.
We study the fundamental mechanisms that govern charge carrier transport in rubrene and that are still under debate. In particular, by the thermal motion of molecules the electronic wave function can localize on time scales corresponding to these molucular vibrations and charge transport has to be modelled by transient localization. To verify this theory for organic semiconductors we measure the hole mobility as a function of temperature in FETs composed of ultra pure rubrene crystals as active transport layer and compare the results to calculations [1]. In the next step we investigate these FETs by IR spectroscopy to trace the dynamical behaviour of charges and their excitation by pulsed lasers.
[1] S. Fratini, S. Ciuchi & D. Mayou, Phys. Rev. B 89, 235201 (2014)