Regensburg 2016 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 90: Poster III
HL 90.36: Poster
Thursday, March 10, 2016, 16:00–19:00, Poster A
Mechanical tuning of nuclear spins in Si — •Moritz P.D. Pflüger, David P. Franke, and Martin S. Brandt — Walter Schottky Institut and Physik-Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
Nuclear spins of ionized donors in silicon have many properties that make them interesting for quantum computing applications, especially as a quantum memory. They are compatible with silicon technology, scalable, and possess very long coherence times [1]. However, due to their good isolation, it is difficult to address them selectively. This becomes possible for heavier donors, such as 75As, via their quadrupole moment which interacts with electric field gradients which in turn can be tuned by applying elastic strain to the host crystal [2].
We measure pulsed electrically detected electron nuclear double resonance of arsenic-doped silicon, a technique allowing to observe nuclear magnetic resonance phenomena via monitoring the change in conductivity. We extend earlier experiments by applying stress to the samples via piezoelectric actuators, discuss the resonance shifts achievable, and explore the influence of strain on the decoherence of the 75As+ nuclear spins.
[1] M. Steger, K. Saeedi, M. L. W. Thewalt, J. J. L. Morton, H. Riemann, N. V. Abrosimov, P. Becker, and H.-J. Pohl, Science 336, 1280 (2012).
[2] D. P. Franke, F. M. Hrubesch, M. Künzl, H.-W. Becker, K. M. Itoh, M. Stutzmann, F. Hoehne, L. Dreher, and M. S. Brandt, Phys. Rev. Lett. 115, 057601 (2015).