Regensburg 2016 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 90: Poster III

HL 90.6: Poster

Thursday, March 10, 2016, 16:00–19:00, Poster A

Characterization of absorber and buffer layers in Cu₂ZnSn(S,Se)₄ solar cells by electroreflectance — •Nicolas Schäfer¹, Christoph Krämmer¹, Christian Huber¹, Mario Lang¹, Tobias Abzieher², Thomas Schnabel², Erik Ahlswede², Michael Powalla^2,3, Heinz Kalt¹, and Michael Hetterich¹ — ¹Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany — ²Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg, 70565 Stuttgart, Germany — ³Light Technology Institute, Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany

Cu₂ZnSn(S,Se)₄ (CZTSSe) is a promising thin-film solar cell absorber material. One of its main advantages compared to the well-established Cu(In,Ga)Se₂ (CIGS) is the absence of expensive and environmentally problematic indium and gallium. However, especially the achieved open-circuit voltages are still a problem and the CdS buffer adopted from the CIGS device architecture may not be optimal. In our study we use electromodulated reflectance (ER) to study the band structure of both the CZTSSe absorber and buffer. In this context the impact of post-annealing procedures and the application of alternative buffer layers on the absorber/buffer interface is of particular interest.