Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 91: Poster IIIb (Joint session of DS and HL, organized by HL)

HL 91.15: Poster

Donnerstag, 10. März 2016, 16:00–19:00, Poster A

PAMBE-Growth of SnO₂ — •Max Kracht, Alexander Karg, Jie Jiang, Jörg Schörmann, and Martin Eickhoff — I. Physikalisches Institut der JLU Gießen, Heinrich-Buff-Ring 16, D-35392 Gießen

The application of tin dioxide (SnO₂) as gas sensitive material or highly doped as a transparent conducting oxide has been investigated in detail. To further increase the application range of this non-toxic, chemically stable material and to gain further knowledge of the basic material properties, single crystalline thin films are required.

Plasma-assisted molecular beam epitaxy is a well established method to gain high quality crystalline films. Therefore SnO₂ thin films were grown by PAMBE on r-plane sapphire substrates. The influence of different growth parameters like substrate temperature or tin beam equivalent pressure on the structural and electrical film characteristics are investigated using high resolution X-ray diffraction (HRXRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and Hall measurements.