Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 91: Poster IIIb (Joint session of DS and HL, organized by HL)
HL 91.16: Poster
Donnerstag, 10. März 2016, 16:00–19:00, Poster A
Group-IV doping of ion-beam sputtered Ga2O3 — •Philipp Schurig, Martin Becker, Fabian Michel, Angelika Polity, and Martin Eickhoff — 1st Physics Institute, Justus-Liebig-University Giessen, Giessen, Germany
For the last years the interest in transparent conductive materials stayed at a high level due to possible applications in the field of
(opto-)electronics, for example as photoresistors/-diodes, high temperature sensors and solar cells. The thermodynamically most stable oxide of gallium, β-gallium oxide, has monoclinic crystal structure and a band gap of around 4.9 eV.
One requirement for the usage in electronics is a controllable carrier concentration, achievable by n-type doping with suitable elements as there are Sn, Si and Ge. With Ion-Beam-Sputtering from a Ga2O3 target Sn, Si and Ge doped samples were prepared. The substrate holder was heated to 650 ∘C during deposition and c-sapphire and quartz substrates were used.
Transmittance, X-Ray-Diffraction, Energy Dispersive X-Ray Spectroscopy and Scanning Electron Microscopy measurements were performed to characterize the deposited layers after deposition and to investigate the effect of a post-deposition anneal at temperatures of 1000 ∘C and above in oxidizing atmosphere. An improvement of the structural properties and a blue-shift of the optical absorption edge were observed.