Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 91: Poster IIIb (Joint session of DS and HL, organized by HL)

HL 91.17: Poster

Donnerstag, 10. März 2016, 16:00–19:00, Poster A

An X-ray photoelectron spectroscopy (XPS) study on NiO/SnO₂ and SnO/SnO₂ heterojunctions — •Fabian Michel, Benedikt Kramm, Martin Becker, Robert Hamann, Angelika Polity, Detlev M. Hofmann, and Martin Eickhoff — Justus-Liebig Universität Giessen, Germany

The energy band diagrams of different pn-heterojunctions were evaluated by X-ray photoelectron spectroscopy. The heterojunctions were fabricated by ion beam sputtering. The valence band and conduction band discontinuities of NiO/SnO₂ and SnO/SnO₂ were investigated using the common method of E.A. Kraut¹ and J.R. Waldrop² considering the position of the different core level signals and especially the related energy difference in the vicinity of the heterointerface. Using depth profiling via in situ Ar+ ion etching we made a qualitative analysis of the interfacial chemical state by estimating the modified Auger parameter and the relative concentrations of the photoelectron signals. We also investigated the challenging Ni 2p signal by decomposing the line structure and the satellite structure. Results will be discussed with respect to other metal oxide heterojunctions.

¹ Kraut, E. A.; Grant, R. W.; Waldrop, J. R. und Kowalczyk, S. P., Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopy. Phys. Rev. B, Aug. 1983, 28(4):1965

² Waldrop, J. R. und Grant, R. W., Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy. Applied Physics Letters, 1996, 68(20):28792881