Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 91: Poster IIIb (Joint session of DS and HL, organized by HL)

HL 91.6: Poster

Donnerstag, 10. März 2016, 16:00–19:00, Poster A

Nonlocal resistance in plasma hydrogenated graphene — •Tobias Völkl, Thomas Ebnet, Philipp Nagler, Tobias Korn, Christian Schüller, Dieter Weiss, and Jonathan Eroms — Institut für Experimentelle und Angewandte Physik, Universität Regensburg, Germany

Plasma hydrogenation was used to modify monolayer graphene with the intent to increase the spin orbit coupling strength in graphene. Raman spectroscopy was employed to extract the defect concentration and to characterize the hydrogenation process. Further, the temperature dependence of the hydrogen desorption was examined. Electrical transport measurements on an as fabricated sample showed large nonlocal resistances. The high value of the nonlocal resistance and the absence of any inplane magnetic field dependence of this resistance indicate that this signal is not caused by the spin-Hall effect.