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HL: Fachverband Halbleiterphysik
HL 92: Postersession DS/HL
HL 92.37: Poster
Thursday, March 10, 2016, 16:00–19:00, Poster A
Growth morphologies of a polar pentacene derivative on SiO2 and graphene — •Benjamin Kaufmann1, Markus Kratzer1, Tony Lelaidier2, Olivier Siri2, Aleksandar Matković3, Radoš Gajić3, Conrad Becker2, and Christian Teichert1 — 1Institute of Physics, Montanuniversitaet Leoben, Franz Josef Straße 18, 8700 Leoben, Austria — 2CINaM, Aix Marseille Université, Campus de Luminy Case 913, 13288 Marseille, France — 3Institute of Physics, Department for Solid State Physics and New Materials, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia
We investigated the growth morphologies of the polar organic molecule dihydrotetraazapentacene (DHTAP) on SiO2 and exfoliated graphene. The morphology of ultra-thin films grown by hot wall epitaxy was analyzed using atomic force microscopy. The morphologies arising between 290K - 390K exhibit a strong temperature dependence and differ from those found for pentacene. Above substrate temperatures of 330K, the molecules tend to build curved, needle-like structures with lengths of 50nm - 1000nm and heights of a few nanometers. At lower growth temperatures, no needles are present as it is also the case for pentacene growth on SiO2. On graphene, the islands are reduced in height compared to those grown on SiO2. Also here, needle-like structures were found.