Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 92: Postersession DS/HL

HL 92.6: Poster

Donnerstag, 10. März 2016, 16:00–19:00, Poster A

Growth-of p-type nickel oxide on different substrates and surface orientations — •Carsten Tschammer and Oliver Bierwagen — Paul-Drude-Institut, Hauvogteiplatz 5-7, 10117 Berlin, Germany

NiO belongs to the transparent semiconducting oxides with unintentional p-type conductivity. Currently, NiO is used in batteries and capacitors, and is considered for future applications in UV-detectors, all-oxide hetero pn-diodes, and organic solar cells. For the latter, NiO is an excellent candidate for an interfacial layer between the ITO anode and active organic layer, serving as electron blocking and hole transport layer. Doping NiO with Nitrogen as an acceptor should increase the p-type conduction.

Here NiO thin layers were grown by plasma-assisted MBE using RHEED as in situ monitoring tool. For the growth of well-defined NiO layer and surfaces MgO was chosen as substrate due to its common crystal structure and low lattice mismatch to NiO. Thus, NiO was grown on MgO(100), MgO(110), MgO(111) to help investigating the interface to the active organic layer on differently oriented surfaces. Growth on epitaxial ITO and In₂O₃ was performed to come closer to the solar cell application and application in pn-diodes, respectively. The film crystal and surface structure were investigated by AFM, XRD, XRR. The electronic properties were investigated by Raman, PL and transport measurements.