Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 95: Novel Functional Materials II
HL 95.1: Vortrag
Freitag, 11. März 2016, 09:30–09:45, H10
Electron traps in disordered Pt/TiO2 hydrogen sensors — Laurin Schnorr1, •Mihai Cerchez1, Dieter Ostermann2, and Thomas Heinzel1 — 1Heinrich Heine University Düsseldorf, Universitätsstr. 1D-40225 Düsseldorf — 2ODB-Tec GmbH & Co. KG, Bussardweg 12, 41468 Neuss, Germany
Hydrogen sensing at disordered Pt/TiO2 interfaces lacks a deep understanding of the physical processes involved. Aspects related to the mechanism of electron conduction in such systems are attributed usually to oxygen vacancies and/or titanium interstitials. From an electronic transport point of view, defects manifest through creation of electronic states in the band gap, position of which is still under debate. Little is known about the effect of hydrogen on the band gap states during the sensing process. This knowledge would bring some more light concerning the physical hydrogen sensing mechanism. Here we make a step in this direction by performing deep level transient spectroscopy experiments [1] before, during, and after exposure to low concentrations of hydrogen. Our findings [2] suggest that two broad trap levels are present before the exposure, while a third level is formed during hydrogen exposure.
[1] D. V. Lang, J. Appl. Phys. 45, 3023 (1974). [2] L. Schnorr, M. Cerchez, D. Ostermann, and T. Heinzel, Phys. Status Solidi B (2015) (in press)