Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 98: Focus Session: Functionalization of Semiconductors III

HL 98.1: Vortrag

Freitag, 11. März 2016, 09:30–10:00, H16

MOVPE growth of InGaAs quantum dots in functionalized semiconductor structures — •Matthias Paul, Jan Kettler, Caterina Clausen, Katharina Zeuner, Fabian Olbrich, Michael Jetter, and Peter Michler — Institut für Halbleiteroptik und funktionelle Grenzflächen, Universität Stuttgart and Research Centers SCoPE and IQST, Allmandring 3, 70569 Stuttgart

InGaAs semiconductor quantum dots (QDs) have been studied as sources for single photons and entangled photon pairs with regard to applications in quantum computation and communication. In that regard, the tunability of the QD emission wavelengths and the control of the area density together with the benefits of a solid state system offer a high degree of integration into photonic devices. We present the growth of low density InGaAs QDs on GaAs substrates for wavelengths ranging from below 900 nm to above 1300 nm by metal-organic vapor-phase epitaxy (MOVPE). Single-photon characteristics and radiative decay cascades are demonstrated in correlation measurements. The site-controlled growth of QDs on patterned GaAs substrates promises deterministic implementation into devices and easy addressability of individual QDs. An important step towards quantum computation with photonic integrated circuits is the realization of emitters and detectors on one chip, e.g., based on InGaAs QDs and GaAs waveguides. In addition, the integration of an optical excitation source allows for a compact device design without an electric field or current at the position of the QDs. Finally, the QDs are embedded in resonator structures to increase the extraction efficiency and study coupling phenomena.