Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 98: Focus Session: Functionalization of Semiconductors III

HL 98.2: Vortrag

Freitag, 11. März 2016, 10:00–10:15, H16

Temperature-stable large-bandwidth directly modulated 1.5 µ m quantum dot lasers — Saddam Banyoudeh, •Alireza Abdollahinia, and Johann Peter Reithmaier — Technische Physik, Institute of Nanostructure Technologies and Analytics, University of Kassel, Germany

Within the last decade, semiconductor quantum dot (QD) structures have interested notably both fundamental physics and optoelectronic device applications specially QD lasers operating at 1.5 µ m, significant for optical fiber communication [1]. Self-assembled semiconductor QDs formed via the Stranski-Krastanov growth mode have provided a robust active medium for optoelectronic devices like lasers [2], essentially needing a base of high QD density with a homogeneous size distribution, preferably round shaped, resulting in properties such as high temperature stability, reduced threshold current, increased spectral and differential gain, and higher modulation bandwidth [3]. Recently we showed improvement in the QD epitaxy by reduction of the inhomogeneous size distribution [4]. In this work recent enhancements for broad area (BA) and ridge waveguide (RWG) lasers show a high modal gain of 14.5 cm⁻¹ per QD layer with a temperature-insensitive threshold current density exhibiting T₀ values of 125 K and 152 K for BA and RWG lasers, respectively, with remarkable improvements in the small signal modulation bandwidth of more than 16 GHz.

[1] J.P. Reithmaier et al., J.Phys.D 38, 2088 (2005) [2] D. Gready et al., PTL 24, 809 (2012) [3] K. Akahane et al., PTL 22, 103 (2010) [4] S. Banyoudeh et al., JCG 425, 299 (2015)