Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 98: Focus Session: Functionalization of Semiconductors III
HL 98.3: Vortrag
Freitag, 11. März 2016, 10:15–10:30, H16
Nitrogen incorporation in GaAs using DTBAA, a novel N precursor with no direct C-N bond — •Eduard Sterzer1, Andreas Beyer1, Lennart Duschek1, Lukas Nattermann1, Benjamin Ringler2, Bernhard Leube2, Andreas Stegmüller2, Ralf Tonner2, Carsten von Hänisch2, Wolfgang Stolz1, and Kerstin Volz1 — 1Material Sciences Center and Faculty of Physics — 2Material Sciences Center and Faculty of Chemistry, Philipps-Universität Marburg, Germany
III/V semiconductors containing small amounts of N are discussed in the context of solar cell and laser applications. MOVPE growth of these alloy is typically complicated as a large excess of the conventional N precursor (UDMHy) is required in the gas phase to incorporate even small amounts of N. Furthermore, applications are hampered by significant C incorporation in the layers during growth, which either stems from the N precursor or the group III sources. Our novel N precursor DTBAA contains no direct C-N bond, which could reduce the C incorporation. We used this molecule - together with TEGa and, in some experiments, also with TBAs and TMIn - in low temperature Ga(NAs) and (GaIn)(NAs) growth. We observed around 10 times higher N incorporation efficiency in Ga(NAs) compared to UDMHy. For (GaIn)(NAs) growth we didn't observe the decrease of N incorporation with higher In amount as reported for UDMHy in the literature. These studies underline the great potential of DTBAA for the growth of dilute nitride III/V alloys. Support of the DFG in the framework of GRK 1782 "Functionalization of Semiconductors" is greatfully acknowledged.