Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 98: Focus Session: Functionalization of Semiconductors III

HL 98.4: Vortrag

Freitag, 11. März 2016, 11:00–11:30, H16

GaN-on-Si(hkl) epitaxy: physics and chemistry — •Andre Strittmatter and Armin Dadgar — Otto-von-Guericke Universitaet Magdeburg

GaN epitaxy on Si substrates is governed by the atomic arrangement on the Si surface and by chemical processes during growth. Thermal stresses, mechanical strain, and a chemical instability of the Si surface are severe problems which need to be controlled throughout the growth. In order to obtain device-quality material certain measures have to be taken in order to achieve stable growth regimes and single phase, highly crystalline layers. GaN layers with specific orientations can be obtained if Si substrates with proper suface orientations are chosen and special preparation steps are applied to these kind of substrates. We will compare the special requirements of GaN growth on Si for surface orientation.