Regensburg 2016 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 99: Gallium Nitride: Devices
HL 99.2: Vortrag
Freitag, 11. März 2016, 10:00–10:15, H17
Photon Statistics of high–β Nitride Nanobeam Lasers — •Stefan T. Jagsch1, Noelia Vico Triviño2, Gordon Callsen1, Stefan Kalinowski1, Ian M. Rousseau2, Jean-François Carlin2, Raphaël Butté2, Axel Hoffmann1, Nicolas Grandjean2, and Stephan Reitzenstein1 — 1Institut für Festkörperphysik, Technische Universität Berlin, D-10623 Berlin, Germany — 2Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
1D photonic crystal nanobeam cavities feature an ultra–low mode-volume and are thus exciting candidates for the realization of low threshold and high spontaneous emission coupling factor (β) nanolasers. Of particular interest are GaN based nanobeam lasers because they promise room–temperature operation, which is highly attractive from a practical perspective.
Promising applications include for instance on–chip silicon integrated photonics [1].
Herein we present a comprehensive temperature dependent quantum optical characterization of continuous wave lasing in a high–β III–nitride nanobeam cavity grown on silicon.
In the present structures, with β–factors close to unity, the onset of stimulated emission can hardly be identified from the sole I-O characteristics. Indeed, we show that the analysis of the photon statistics is required to reveal a threshold behaviour.
Our results highlight the importance of determining the photon statistics of emission to unambiguously determine the onset of lasing in nanolasers.
Triviño et al., Nano Lett. 15 (2), 1259, 2015