Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 99: Gallium Nitride: Devices

HL 99.3: Vortrag

Freitag, 11. März 2016, 10:15–10:30, H17

Blue LED optimization based on a MOCVD growth parameter sensitivity study — •Michael Heuken, Egidijus Sakalauskas, Xiaojun Chen, Olivier Feron, Hannes Behmenburg, Ralf Leiers, Markus Luenenbuerger, Peter Lauffer, Adam Boyd, and Johannes Lindner — AIXTRON SE, Dornkaulstr 2, 52134 Herzogenrath, Germany m.heuken@aixtron.com

The most important dependencies such as LED wavelength dependence on surface temperature, ammonia flow, group III molar flow, total flow and total pressure was experimentally determined for a state of the art production reactor. Experimentally obtained temperature sensitivity data serve as input to simulate, understand and finally improve the uniformity and performance of LED. Average system uptime higher than 90% is obtained based on routine maintenance procedures with more than 3 production runs per day in a production process flow for competitive LED products. The measured dependencies and the equipment optimizations result in wavelength uniformity of full susceptor load consisting of 4 inch DPSS wafers of 91.8% for a 6nm bin yield centred at 443nm. In a multi growth campaign utilizing 5 runs with 4 inch DPPS wafer loaded the run to run wavelength stability was assessed. On-wafer uniformity is stable with an average standard deviation of 1.48 nm. R2R wavelength standard deviation of 0.23 nm was observed for this series indicating less than 0.2 C standard deviation in average QW temperature. Loading 12 wafer with 6 inch diameter enable additional productivity gains demonstrated as standard deviation in QW emission wavelength of σ=4.5nm.