Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 99: Gallium Nitride: Devices

HL 99.6: Vortrag

Freitag, 11. März 2016, 11:30–11:45, H17

Carbon doping of GaN using propane for compensation of n-type GaN layers — •Andreas Lesnik, Marc Hoffmann, Jonas Hennig, Aqdas Fariza, Jürgen Bläsing, Hartmut Witte, Armin Dadgar, and André Strittmatter — Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg

We investigated propane as source for intentional carbon doping of GaN using metalorganic vapor-phase epitaxy (MOVPE). The effect of carbon incorporation on structural and electrical parameters was studied in the concentration range of 1x10e¹⁷-5x10e¹⁸ cm⁻³. Carbon doping using propane leads to highly resistive GaN layers. In order to analyze the compensation efficiency of carbon for n-type GaN layers a Si+C co-doping technique was applied. Resistance and Hall effect measurements at room temperature reveal the persistence of the compensation effect over the whole doping range. Further structural analysis was done by secondary ion mass spectroscopy measurements, high-resolution x-ray diffraction, and atomic force microscopy.