Regensburg 2016 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 99: Gallium Nitride: Devices

HL 99.7: Vortrag

Freitag, 11. März 2016, 11:45–12:00, H17

Impact of buffer structure on the performance of AlInN/GaN based FETs grown on Si (111) — •Jonas Hennig, Armin Dadgar, Jürgen Bläsing, Annette Dietz, and André Schrittmatter — Otto-von-Guericke Universität,Magdeburg

We present a study on the impact of SiN masks as well as the influence of AlN interlayers on the performance of AlInN/GaN field effect transistors grown on Si(111). Characteristic device parameters such as breakdown voltage, on-resistance, and buffer leakage are analysed with respect to the quality of the underlying buffer structure. Buffer structures on Si(111) substrates are usually optimized for controlling stresses and the dislocation density in the structure. This is on one hand necessary to enable a compensation of thermal stresses which arise after growth during cooling down to room-temperature. On the other hand, device parameters of FET structures improve with reduction of the dislocation density. We have investigated different AlGaN/GaN buffer structures in combination with low-temperature grown AlN interlayers and in-situ deposited SiN-masks for optimum performance of the FET devices.