Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

MA: Fachverband Magnetismus

MA 11: Magnetic Thin Films I

MA 11.6: Vortrag

Montag, 7. März 2016, 16:30–16:45, H33

Structural, magnetic and electrical properties of sputter deposited Mn-Fe-Ga thin films — •Alessia Niesen, Christian Sterwerf, Manuel Glas, Jan-Michael Schmalhorst, and Günter Reiss — Center for Spinelectronic Materials and Devices, Physics Department, Bielefeld University, Germany

Structural and magnetic properties of DC sputter deposited Mn_3−xFeGa were investigated. The crystallinity of the Mn-Fe-Ga thin films (40 nm thick) was confirmed using XRD. XRR and AFM measurements were utilized to investigate the surface, roughness, thickness and density of the deposited Mn-Fe-Ga. Depending on the stoichiometry, the deposition temperature, as well as the used substrate (SrTiO₃ (001) and MgO (001)) or buffer layer (TiN) the Mn-Fe-Ga crystallizes in the cubic D0₃ or the tetragonally D0₂₂ distorted phase (c = 7.14 Å). The main drawback for applications is the island growth of the Mn-Fe-Ga, confirmed by AFM measurements. Low roughness (≤ 1nm) and the D0₂₂ phase was observed for each used deposition temperature and composition of the Mn-Fe-Ga on SrTiO₃. Strong PMA was confirmed via AHE and AGM measurements. Low saturation magnetization (M_s ≈ 200 kA/m) and high coercivity fields (Hc ≤ 2 T) in the oop direction can be reached by tuning the composition. TiN buffered Mn_2.7Fe_0.3Ga revealed sharper switching of the magnetization compared to the unbuffered layers. XAS and XMCD measurements showed Mn-O at the interface due to the MgO capping and no Mn-O in the bulk. The XMCD spectra revealed ferromagnetic coupling between the Mn and the Fe atoms.