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MA: Fachverband Magnetismus

MA 17: Poster Session I

MA 17.55: Poster

Dienstag, 8. März 2016, 09:30–12:30, Poster B1

Electronic-transport characterization of (Ga,Mn)As thin films — •Jan Teschabai-Oglu¹, Martin Lonsky¹, Klaus Pierz², Hans Werner Schumacher², and Jens Müller¹ — ¹Physikalisches Institut, Goethe-Universität, Frankfurt (M), Germany — ²Physikalisch-Technische Bundesantalt, Braunschweig, Germany

A semiconductor, which is also a ferromagnet, may be used in spintronic applications, where logic and memory operations could in principle be integrated on a single device. Subject of our research is the semiconductor (Ga,Mn)As, where ferromagnetism is induced by a high concentration of magnetic elements (Mn) in the host GaAs matrix. Inspired by recent results of a diverging 1/f-noise level in the ferromagnetic semimetal and colossal magnetoresistance material EuB6 [1], where the existence of percolating nanoscale magnetic clusters is established, we perform systematic studies of fluctuation (noise) spectroscopy on epitaxial thin films of (Ga,Mn)As [2] with different growth parameters. We present results of the (magneto-)resistivity and both ordinary and anomalous Hall effect to characterize the electronic (magneto-)transport properties. These studies are complemented by measurements of the resistance and Hall resistance noise yielding intrinsic 1/f-type or Lorentzian power spectral densities. We discuss the temperature and magnetic field dependences of the noise in terms of carrier number and/or mobility fluctuations.
P. Das et al., Phys. Rev. B 86, 184425 (2012)
A. B. Hamida et al., Phys. Stat. Solidi B 251, 1652 (2014)