Regensburg 2016 – scientific programme
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MA: Fachverband Magnetismus
MA 17: Poster Session I
MA 17.61: Poster
Tuesday, March 8, 2016, 09:30–12:30, Poster B1
Preparation and characterization of TiN buffered Co2FeAl thin films — •Jana Ludwig, Alessia Niesen, Jan Schmalhorst, and Günter Reiss — Center for Spinelectronic Materials and Devices, Physics Department, Bielefeld University, Germany
TiN buffered Co2FeAl thin films were prepared via DC magnetron sputtering. The TiN seed-layers (30 nm thickness) were deposited on MgO (001) and SrTiO3 (001) substrates at a deposition temperature of 405∘C in a mixture of Ar and N2 atmosphere and a pressure of p=1.6 · 10−3 mbar. A composit target was used to deposit the Co2FeAl layers. The Ar-pressure was set to p=2.3 · 10−3 mbar and the deposition of Co2FeAl was carried out at room temperature. 2 nm thin MgO layers were deposited on top to prevent the samples from degradation. The crystallographic properties of Co2FeAl and TiN were determined via x-ray diffraction and x-ray reflection measurements. B2 crystalline ordering was confirmed even for the as deposited state. The film thicknesses were varied between 10 nm and 0.8 nm in order to obtain and investigate in- and out-of-plane magnetized Co2FeAl layers. Post annealing processes with temperatures up to 500∘C were carried out in order to investigate the influence on the magnetic and structural properties. The magnetic properties of TiN buffered Co2FeAl were investigated via MOKE measurements and revealed high perpendicular magnetic anisotropy for the 0.9 nm thin layers. The coercive fields increased with increasing post annealing temperature to 350 Oe and squareness ratios of 1 for temperatures above 300∘C. The thermal stability was confirmed for temperatures up to 500∘C.