Regensburg 2016 – scientific programme
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MA: Fachverband Magnetismus
MA 17: Poster Session I
MA 17.65: Poster
Tuesday, March 8, 2016, 09:30–12:30, Poster B1
Mn3 + xGe Heusler compound with perpendicular magnetic anisotropy — •Hendrik Dohmeier, Alessia Niesen, Jan Schmalhorst, and Günter Reiss — Center for Spinelectronic Materials and Devices, Physics Department, Bielefeld University, Germany
New magnetic materials have to be prepared and characterized in order to build future spintronic devices like the spin-transfer-torque-(STT)-MRAM. Materials with a large perpendicular magnetic anisotropy are good candidates for this kind of devices. Mn3Ge is a promising material due to the tetragonally distorted D022 crystal structure. An intrinsic characteristic of this tetragonal Heusler alloy is the uniaxial magnetic anisotropy with an out-of-plane oriented magnetic easy axis.[1] For this reason Mn3+xGe thin films were prepared by dc magnetron co-sputtering on MgO (001) and SrTiO3 (001) substrates to promote (001)-oriented films. Since crystalline quality and surface roughness dependend on the deposition temperature and stoichiometric composition, different parameters were tested to reduce roughness and suppress the creation of secondary crystal phases. Crystallographic and magnetic properties were investigated via x-ray diffraction (XRD), anomalous Hall effect (AHE) and magneto-optic Kerr effect (MOKE). The surface roughness was verified via x-ray reflection (XRR). XRD measurements verified the D022 crystal structure with an out-of-plane lattice constant of c = 7.21 Å, while MOKE and AHE measurements confirmed a magnetic out-of-plane anisotropy.
[1] H. Kurt et al., Appl. Phys. Lett. 101 (2012) 132410