Regensburg 2016 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 22: Magnetic Semiconductors (jointly with HL)

MA 22.3: Vortrag

Dienstag, 8. März 2016, 14:30–14:45, H31

Spin-lattice-relaxation of Bismut doped Silicons slabs in air - a DFT approach. — •Johannes Gugler and Peter Mohn — Center for Computational Materials Science, Vienna, Austria

ESR experiments show that Bismuth doped Silicon exhibits a relaxation-time up to 1 ms at 10 K. These huge values are obtained due to the electron-spin-free surrounding in a Silicon crystal. The absence of electron-spins makes spin-lattice-relaxation a process of interest, when it comes to quantum dots. We present a DFT-investigation of the crystalographic structure, the DOS, the phonon spectra and the configuration of Bismuth doped (100)- and (111)-Silicon surfaces in air. We evaluate the influence of different position of the Bismuth atom inside the silicon slab on the spin-lattice-relaxation mechanisms.