Regensburg 2016 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 35: Spin dependent Transport Phenomena
MA 35.4: Vortrag
Mittwoch, 9. März 2016, 15:45–16:00, H33
Room temperature operation of n-type Si spin MOSFET — •Masashi Shiraishi1, Takayuki Tahara1, Hayato Koike2, Sasaki Tomoyuki2, Yuichiro Ando1, Makoto Kameno1,3, Kazuyuki Tanaka3, Shinji Miwa3, and Yoshishige Suzuki3 — 1Kyoto University, Japan — 2TDK Corporation, Japan — 3Osaka University, Japan
Si spintronics has been collecting tremendous attention, because of its long spin lifetime and achievement of spin transport at room temperature (RT) [1,2]. In 2014, we have demonstrated the room temperature spin transport in non-degenerate Si [3], and the next milestone was set to be realization of Si spin MOSFET. In this presentation, we report on our experimental demonstration of Si spin MOSFET with high on/off ratio of spin signals. The on/off ratio is greater than 103, whereas on/off ratio in a conventional MOSFET operation is ca. 105. More importantly, the gate voltage dependence of the spin signals and the MOSFET signals are in good agreement [4]. This achievement can pave the way to a practical application of Si spin MOSFETs.
References : [1] T. Suzuki, M. Shiraishi et al., Appl. Phys. Express 4, 023003 (2011). [2] E. Shikoh, M. Shiraishi et al., Phys. Rev. Lett. 110, 127201 (2013). [3] T. Sasaki, M. Shiraishi et al., Phys. Rev. Applied 2, 034005 (2014). [4] T. Tahara, M. Shiraishi, et al., Appl. Phys. Express 8, 113004 (2015) (selected as Spotlight Paper).