Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

MM: Fachverband Metall- und Materialphysik

MM 15: Poster session I

MM 15.20: Poster

Montag, 7. März 2016, 18:00–20:00, Poster B3

Ion-Beam Sputtered Thin Li_xSi Films and Atomic Transport — •Florian Strauß¹, Harald Schmidt¹, and Paul Heitjans² — ¹TU Clausthal, AG Mikrokinetik, Institut für Metallurgie, Deutschland — ²Leibniz Universität Hannover, Institut für Physikalische Chemie und Elektrochemie, Deutschland

Thin films of lithium-silicon compounds as well as of pure silicon, both in the amorphous and the crystalline state, are promising high capacity anode materials for future battery applications. An investigation of atomic and ionic transport processes in these materials is needed for an optimisation of charging/discharging properties and power densities. Li_xSi can either be deposited from a segmented target consisting of elemental Si and metallic Li by reactive co-sputtering as shown in [1] or directly from a bulk Li-Si alloy target. While no value for x below 1 is achievable for Li-Si alloys, segmented targets have been shown to produce films with a value of 0.03 < x < 0.6. Experiments with SIMS, XPS and XRD were used to further characterise the sputtered layers. Measurements of transport parameters can be done by a neutron reflectometry based method, recently proposed by Hüger et al. [2].

[1] F. Strauß et al., RSC Adv. 5, 7192 (2014).

[2] E. Hüger et al., Nano Lett. 13, 1237 (2013).