Regensburg 2016 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 26: Poster session II

MM 26.16: Poster

Dienstag, 8. März 2016, 18:30–20:30, Poster B3

In-operando soft x-ray microspectroscopy of organic field-effect transistors — •Xiaoyan Du, Benedikt Rösner, and Rainer Fink — Physikalische Chemie II, FAU Erlangen-Nürnberg, 91058 Erlangen, Germany

Organic semiconducting films bear high potential for organic electronics. While many studies are devoted to the morphology and interface of the semiconducting thin film, investigations of the devices under operation are rather scarce. Microscopic resolution further allows to correlating film morphology with charge transport. Upon application of gate and/or source-drain voltages in organic field-effect transistors (OFETs), the energetic levels of organic semiconductor shift enabling charge accumulation and charge transport. In-operando NEXAFS spectroscopy in Scanning Transmission X-ray Microspectroscopy (STXM) were used to study the density of unoccupied density of states (UDOS). In order to correlate the impact of external fields (gate effect) to energetic shifts of the occupied levels (HOMO, core levels), spatially resolved XPS measurements were explored. In this contribution, we discuss various aspects and limitations of in-operando microspectroscopy using α, ω-dihexyl-sexithiophene (DH6T) based OFETs to obtain full insight into the electronic structure.