Regensburg 2016 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 26: Poster session II
MM 26.20: Poster
Dienstag, 8. März 2016, 18:30–20:30, Poster B3
Investigating the formation, growth and phase transition of semiconductor nano-crystals in solid by in-situ annealing in TEM — •Mingjian Wu1,2,3, Esperanza Luna2, Janne Puustinen3, Mircea Guina3, Achim Trampert2, and Erdmann Spiecker1 — 1WW9 & CENEM, Department Werkstoffwissenschaften, FAU Erlangen-Nürnberg, Cauerstr. 6, 91058 Erlangen, Germany — 2Paul-Drude-Institut, Hausvogteiplatz 5-7, 10117 Berlin, Germany — 3Optoelectronics Research Centre, Tampere University of Technology, PO Box 692, 33101, Tampere, Finland
Spontaneous formation of semiconductor nano-crystals in solids is of technological importance and of great scientific interest. It can be driven by the intrinsic tendency to phase separation of metastable compounds, if the atomic diffusion is activated. The controllability of the resulting structure and phase relies on a deeper insight into the atomic diffusion process and defects interaction. This can be scoped by observing individual events and/or from statistics of their time and temperature dependency, which is missing in ex-situ studies. Recently, we observed ex-situ, upon annealing, the formation and phase transformation of Bi-containing nano-crystals embedded in GaAs matrix, which might in principle operate as quantum dots. In this work, we perform in-situ annealing experiments on dedicated Ga(As,Bi) epilayers in the TEM. The dynamics of formation and growth of Bi-containing nano-crystals is revealed; and even their phase transformation and interaction with dislocation loops is observed. We will present the latest results and a comprehensive evaluation and interpretation of the data.