Regensburg 2016 – wissenschaftliches Programm
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MM: Fachverband Metall- und Materialphysik
MM 26: Poster session II
MM 26.42: Poster
Dienstag, 8. März 2016, 18:30–20:30, Poster B3
In situ microscopy of material transport and Ge crystallization in the Al-induced layer exchange (ALILE) process — •Janis Wirth, Simon M. Kraschewski, and Erdmann Spiecker — Lehrstuhl für Mikro- und Nanostrukturforschung und Center for Nanoanalysis and Electron Microscopy (CENEM), Universität Erlangen-Nürnberg, Erlangen, Germany
The Al-induced layer exchange (AlILE) process exploits the phenomenon of metal-induced crystallization to fabricate polycrystalline seed layers of Si or Ge at low temperatures [1, 2]. In order to understand the process and the material transport involved we use a combination of different in situ microscopy techniques. At low magnification in situ light microscopy reveals the nucleation and growth of crystalline nuclei as well as the overall kinetics of the process. At higher magnification in situ STEM is employed for studying the details of material transport at and near the crystallization front. Due to the small difference in atomic numbers of Al and Si, the Si-ALILE process cannot be directly visualized by Z-contrast imaging. Using Ge instead of Si, Z-contrast imaging benefits from the considerably larger difference in the atomic number. Similar to Si-AlILE, the Ge-AlILE process is characterized by a layer exchange using a stack of a-Ge/AlOx/Al on glass or SiNx substrate at temperatures of 220-417∘C. Ge diffuses into the Al layer and forms crystalline precipitates upon supersaturation. Subsequently the precipitates grow while the Al is pushed up into the a-Ge top layer.
[1] J. Schneider et al., J. Non-Cryst. Solids 352, (2006)
[2] K. Nakazawa et al., J. Solid State Science 2 (2013)