Regensburg 2016 – scientific programme

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MM: Fachverband Metall- und Materialphysik

MM 48: Topical session: In-situ Microscopy with Electrons, X-Rays and Scanning Probes in Materials Science V - Biological and Electronic Materials

MM 48.1: Topical Talk

Thursday, March 10, 2016, 10:15–10:45, H38

In-situ TEM Switching of Non-volatile Memory Devices — •Sang Ho Oh — POSTECH, 77 Cheongam-Ro. Pohang 37673, Republic of Korea

In this talk I will present two case studies illustrating how in-situ TEM is used to visualize the switching processes of non-volatile memory devices and to reveal the switching mechanisms. In the first example, the 180° polarization switching process of an epitaxial PbZr0.2Ti0.8O3 (PZT) thin film capacitor is presented. The preferential, but asymmetric, nucleation and forward growth of switched c-domains were observed at the PZT/electrode interfaces, arising due to the built-in electric field induced at each interface. It was found that the preexisting a-domains split into fine a- and c-domains constituting a 90° stripe domain pattern during the 180° polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. In the second example, as a model resistive random access memory (ReRAM), I will show in-situ TEM observation of the multi-level switching of a TiN/Pr0.7Ca0.3MnO3 (PCMO)-based ReRAM which utilizes the resistance change as the two materials goes through reversible redox reactions at the interface. Based on the direct observations of the microstructural evolution and correlated I-V characteristics, a resistive switching model for TiN/PCMO devices will be presented.