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Regensburg 2016 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 48: Topical session: In-situ Microscopy with Electrons, X-Rays and Scanning Probes in Materials Science V - Biological and Electronic Materials

MM 48.3: Vortrag

Donnerstag, 10. März 2016, 11:15–11:30, H38

Microspectroscopic Insights into Electronic SwitchingBenedikt Rösner1, Xiaoyan Du1, Ke Ran2, Erdmann Spiecker2, Marat M. Khusniyarov3, and •Rainer H. Fink11Physikalische Chemie II, FAU Erlangen-Nürnberg — 2CENEM, FAU Erlangen-Nürnberg — 3Anorganische Chemie II, FAU Erlangen-Nürnberg

Controlling the electronic switching in metal-organic semiconductors is crucial for implementation of these materials into functional devices. We report on in-situ investigations of electronic switching with different microspectroscopic methods using electrons, X-rays and scanning probes. Bipolar resistivity switching in Ag-TCNQ nanocrystals is investigated using TEM, Raman-, and scanning X-ray transmission microspectroscopy. Reverse charge transfer within the charge transfer salt is demonstrated qualitatively and quanitified [1]. In organic field-effect transistors, spatially resolved Raman spectroscopy proofs modifications of the polarizability tensor in the organic semiconductor upon operation, visualizing charge trapping [2]. Light-induced switching in our Fe(II) spin-crossover complex between a paramagnetic high-spin state and a diamagnetic low-spin state is proven using X-ray absorption and XPS. NEXAFS spectroscopy is thereby ideally suited to probe the d-orbital occupation and thus to quantify the fractions of the respective spin states [3]. This work is funded within the GRK 1896 (In-situ Microscopy with Electrons, X-rays and Scanning Probes). [1] B. Rösner et al., PCCP (2015), 17, p. 18278. [2] B. Rösner et al., Organic Electronics (2014), 15, p. 435. [3] B. Rösner et al., Angew. Chemie (2015) 54, p. 12976.

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