O 19: Semiconductor Substrates: Structure, Adsorption and Growth
Montag, 7. März 2016, 17:00–19:30, Poster A
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17:00 |
O 19.1 |
Epitaxial Growth of Ultrathin Lead Films on Silicon (111) — •Tobias Witte, Tim Frigge, Bernd Hafke, Boris Krenzer, and Michael Horn-von Hoegen
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17:00 |
O 19.2 |
Growth, structure and morphology of NiGe and SnGe nano-structures on Ge(001) — •Nicolas Braud, Simon Fischer, Inga Heidmann, Thomas Schmidt, Jan Ingo Flege, Tomasz Grzela, Thomas Schroeder, and Jens Falta
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17:00 |
O 19.3 |
Hydrogen etching of SiC(0001): STM study of an epitaxy template — •Maximilian Bauernfeind, Felix Reis, Stefan Glass, Julian Aulbach, Ralph Claessen, and Jörg Schäfer
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17:00 |
O 19.4 |
Growing mechanism and tip-induced switching of acetylbiphenyl on Si(100)-(2x1):H — •Frank Eisenhut, Justus Krüger, Anja Nickel, Xavier Bouju, Gianaurelio Cuniberti, and Francesca Moresco
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17:00 |
O 19.5 |
Real-space investigation of the reaction channels of acetylene on Si(001) — Patrick Kirsten, •Christian Länger, and Michael Dürr
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17:00 |
O 19.6 |
High Resolution Electron Energy Loss Spectroscopy of Ammonia Adsorbed on a Water Reacted Si(001)-(2x1)-Surface — Niklas Fornefeld, •Felicitas Scholz, Francois Rochet, Stefan Kubsky, and Ulrich Köhler
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17:00 |
O 19.7 |
Sub-surface Incorporation of 3d Metal Atoms Into Bi(111) Films — •N.J. Vollmers, C. Klein, G. Jnawali, D. Lükermann, C. Tegenkamp, H. Pfnür, M. Horn-von Hoegen, W.G. Schmidt, and U. Gerstmann
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