Regensburg 2016 – scientific programme
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O: Fachverband Oberflächenphysik
O 19: Semiconductor Substrates: Structure, Adsorption and Growth
O 19.2: Poster
Monday, March 7, 2016, 17:00–19:30, Poster A
Growth, structure and morphology of NiGe and SnGe nano-structures on Ge(001) — •Nicolas Braud1, Simon Fischer1, Inga Heidmann1, Thomas Schmidt1, Jan Ingo Flege1, Tomasz Grzela2, Thomas Schroeder2, and Jens Falta1 — 1Institute of Solid State Physics, University of Bremen, Germany — 2Leibniz Institute of Innovative Microelectronics (IHP), Frankfurt (Oder), Germany
Nickel germanide is a promising candidate as a contact material in MOSFETs and is expected to play an important role in future Ge-based electronics due to its low formation temperature and low resistivity. In this context, SnGe can be used as channel material to improve the CMOS performance, as it has an even higher carrier mobility than Ge.
Here we present an in-situ investigation of the growth of nickel germanide and SnGe at various temperatures on the Ge(001) surface by means of low-energy electron microscopy (LEEM) and micro diffraction (µLEED). We observe the growth of compact and elongated islands along two orthogonal directions after nickel deposition at 450∘C and 530∘C. We also show that with increasing temperature, the size of the NiGe islands increases while the island density drastically decreases, showing an Arrhenius like behavior [1].
Subsequent thermal annealing above 600∘C results in the dissolution of the NiGe islands into the bulk substrate. Finally we compare the results obtained with the NiGe and those obtained with SnGe.
[1] T. Grzela et al., Nanotechnology 26, 385701 (2015)