Regensburg 2016 – scientific programme
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O: Fachverband Oberflächenphysik
O 19: Semiconductor Substrates: Structure, Adsorption and Growth
O 19.4: Poster
Monday, March 7, 2016, 17:00–19:30, Poster A
Growing mechanism and tip-induced switching of acetylbiphenyl on Si(100)-(2x1):H — •Frank Eisenhut1, Justus Krüger1, Anja Nickel1, Xavier Bouju3, Gianaurelio Cuniberti1,2, and Francesca Moresco1 — 1Institute for Materials Science, Max Bergmann Center of Biomaterials, and Center for Advancing Electronics Dresden, — 2Dresden Center for Computational Materials Science (DCCMS), TU Dresden, 01062 Dresden, Germany — 3CNRS, CEMES (Centre d'Elaboration des Matériaux et d'Etudes Structurales), Toulouse, France
The investigation of molecules on semiconducting surfaces has caused much effort and can push forward molecular electronic devices. In this context one approach is to exploit the structure and related properties of the molecules and to use them as electronic components. In this study one candidate for a molecular latch, acetylbiphenyl (ABP), was investigated by means of low-temperature scanning tunneling microscopy on the passivated silicon surface. Firstly here we report on the growing mechanisms of ABP on Si(100)-(2x1):H. The molecule is fulfilling a dangling bond initiated growing mechanism along as well as perpendicular to the silicon dimer rows and consequently it is forming a 1-dimensional molecular assembly. Despite the growing of the molecule we found a reversible tip-induced conformational change of a molecule at the end of the grown molecular chain. This molecular change can be possibly used as a switch on this surface.