Regensburg 2016 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 21: Morphology Prediction at Interfaces: Theory meets Experiment

O 21.1: Poster

Montag, 7. März 2016, 18:15–20:30, Poster E

Simulating stencil lithography of C60 growth: Impact of localized deposition — •B. Hartung, N. Kleppmann, and S. H. L. Klapp — Institut für Theoretische Physik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany

Understanding and controlling the assembly of crystalline structures of complex organic molecules is an important aspect of the manufacturing of efficient organic and organic/inorganic hybrid semiconductor devices. In organic molecular beam epitaxy growth scenarios, the structure formation can be manipulated by using stencil masks to restrict the molecular beam to a certain area of the substrate. This technique is known as stencil lithography. To examine the basic effects of the mask on the growth behavior of organic molecules, we use C60 homoepitaxy as a model system, based on previous studies [1, 2]. To this end we perform Kinetic Monte Carlo simulations, where the adsorption of particles is restricted to a quadratic area, which is small compared to the size of the overall substrate surface.

The growth behavior shows a transition from the formation of multilayer-islands (covering only the surface of the deposition area) to the formation of monolayer-like islands, the control parameters being the temperature and the adsorption rate. We discuss this behavior studying layer coverages and geometric aspects of growth.

[1] S. Bommel, N. Kleppmann et al., Nat Comm 5, 5388 (2014), doi:10.1038/ncomms6388

[2] N. Kleppmann, S. H. L. Klapp, J. Chem. Phys. 142, 064701 (2015)