Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

O: Fachverband Oberflächenphysik

O 29: Topology- and Symmetry-Protected Materials

O 29.11: Vortrag

Dienstag, 8. März 2016, 13:15–13:30, S051

Probing the electronic structure of the magnetic topological insulator (BiSbV)₂Te₃ with soft X-ray photoelectron spectroscopy — •Thiago Ribeiro Fonseca Peixoto^1,3, Mohammed Al-Baidhani^1,3, Henriette Maass^1,3, Christoph Seibel^1,3, Hendrik Bentmann^1,3, Steffen Schreyeck^2,3, Martin Winnerlein^2,3, Stefan Grauer^2,3, Charles Gould^2,3, Karl Brunner^2,3, Laurens Molenkamp^2,3, and Friedrich Reinert^1,3 — ¹EP VII, Fakultät f. Physik u. Astronomie, Uni-Würzburg — ²EP III, Fakultät f. Physik u. Astronomie, Uni-Würzburg — ³Röntgen Center for Complex Materials (RCCM), Uni-Würzburg

By means of X-ray photoemission (XPS) and absorption (XAS) spectroscopy we investigated the electronic structure of (BiSbV)₂Te₃ thin films, a three-dimensional magnetic topological insulator, recently reported as an anomalous quantum Hall system [1]. The films were epitaxially grown on a Si(111) crystal and covered by a Se cap to avoid contamination during exposition to air. After thermally desorbing the Se cap, the core-level lines of the constituent elements and the V L_2,3 absorption edges were measured for different V concentrations (0, 2 and 4 at.%). Our data evidence the incorporation of Se atoms in the film. By means of resonant photoemission we identify the signature of the V 3d states at the Fermi level, which may contribute to the exotic transport properties of the system. We discuss the chemical environment of the V atoms and show that our techniques are well suited for the study of the electronic properties of this novel class of materials.
[1] C.-Z. Chang et al., Nat. Mat. Lett. 14, 473 (2015).