Regensburg 2016 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 32: 2D Materials I: Structure and Electronic Properties
O 32.1: Vortrag
Dienstag, 8. März 2016, 10:30–10:45, H24
Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) — Alexander Tonkikh1, Elena Voloshina2, Peter Werner1, Horst Blumtritt1, Boris Senkovskiy3, Gernot Güntherodt1,4, Stuart Parkin1, and •Yuriy Dedkov5,6 — 1MPI Halle (Saale), Germany — 2HU Belin, Germany — 3TU Dresden, Germany — 4RWTH Aachen, Germany — 5SPECS GmbH, Germany — 6IHP Frankfurt (Oder), Germany
Hexagonal boron nitride (h-BN) is a promising material for implementation in spintronics due to a large band gap, low spin-orbit coupling, and a small lattice mismatch to graphene and to close-packed surfaces of fcc-Ni(111) and hcp-Co(0001). Epitaxial deposition of h-BN on ferromagnetic metals is aimed at small interface scattering of charge and spin carriers. We report on the controlled growth of h-BN/Ni(111) by means of molecular beam epitaxy (MBE). Structural and electronic properties of this system are investigated using cross-section transmission electron microscopy (TEM) and electron spectroscopies which confirm good agreement with the properties of bulk h-BN. The latter are also corroborated by density functional theory (DFT) calculations, revealing that the first h-BN layer at the interface to Ni is metallic. Our investigations demonstrate that MBE is a promising, versatile alternative to both the exfoliation approach and chemical vapour deposition of h-BN.