Regensburg 2016 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 32: 2D Materials I: Structure and Electronic Properties
O 32.6: Vortrag
Dienstag, 8. März 2016, 11:45–12:00, H24
Molecular interactions to control characteristics of transition metal dichalcogenide based atomically thin field effect devices — •Antony George1, Sina Najmaei2, Andreas Winter1, Zian Tang1, David Kaiser1, Uwe Hübner3, Pulickel Ajayan2, and Andrey Turchanin1 — 1Friedrich Schiller University Jena, Institute of Physical Chemistry, 07743 Jena — 2Department of Materials Science and Nano Engineering, Rice University, Houston — 3Leibniz Institute of Photonic Technology, 07702 Jena
Atomically thin field effect transistors (FET) based on monolayer transition metal dichalcogenides have been attracted an immense research interest recently due to their application potential in ultrathin, lightweight transparent device technology. Here we discuss the possibility to tailor the characteristics of monolayer molybdenum disulphide (MoS2) based FET devices using molecular interactions. We have used self-assembled monolayers (SAMs) to control the surface chemistry of the interface between the semiconducting channel and the gate oxide [1]. Therewith such device parameters like mobility, threshold voltage, carrier density can be tuned. We further extend this concept to the development of FETs, which can be tuned by optically switchable molecules. To this end, we fabricated van der Waals heterostructures using MoS2 and carbon nanomembrane (CNM) [2] functionalized with optically switchable molecules. These devices can have different operational modes depending on the type of molecular switching which is triggered by external optical stimulation. [1] Nano Letters 14, 1354 (2014) [2] Prog. Surf. Sci. 87, 108 (2012)