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Regensburg 2016 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 44: Graphene: Electronic Properties, Structure and Substrate Interaction

Dienstag, 8. März 2016, 18:15–20:30, Poster E

18:15 O 44.1 Effect of electron-density inhomogeneities on the electronic band structure of single-layer graphene — •Trevor Clarke, Peter Kot, Jon Parnell, Sina Habibian, Klaus Kern, and Christian R. Ast
18:15 O 44.2 Robust ballistic transport phenomena in epitaxial graphene nanoribbons — •Johannes Aprojanz, Jens Baringhaus, Maren Wehr, Felix Klösel, and Christoph Tegenkamp
18:15 O 44.3 A bottom-up approach to synthesize graphene nanoribbons on Ru(0001) by chemical vapor deposition — •Ann-Kathrin Henss and Joost Wintterlin
18:15 O 44.4 Twisted graphene layers on metals investigated by scanning tunneling microscopy — •Sabina Simon, Philipp Leicht, Julia Tesch, Luca Gragnaniello, and Mikhail Fonin
18:15 O 44.5 Graphene formation on Ag(001) by liquid precursor deposition — •Jens Uwe Neurohr, Samuel Grandthyll, Karin Jacobs, and Frank Müller
18:15 O 44.6 Lifting Graphene from Substrates by Scanning Tunneling Microscopy — •Anne Holtsch, Anne Holtsch, Wolf-Rüdiger Hannes, and Uwe Hartmann
18:15 O 44.7 Flipping ripples of freestanding graphene membranes using Scanning Tunneling Microscopy — •Bernd Uder, Wolf-Rüdiger Hannes, and Uwe Hartmann
18:15 O 44.8 Local transport measurements in Graphene on SiO2 using Kelvin Probe Force MicroscopyPhilip Willke, Christian Möhle, •Anna Sinterhauf, Thomas Kotzott, Hak Ki Yu, Alec Wodtke, and Martin Wenderoth
18:15 O 44.9 Epitaxial graphene via flash annealing of SiC studied by VT-STM — •Ismail Baltaci, Malte Schulte, Eugenia Wodopian, Harry Ritter, and Carsten Westphal
18:15 O 44.10 STM characterization of epitaxial graphene produced by confinement controlled sublimation of SiCHermann Kromer, Cornelis Hilscher, Richard Hönig, Christoph Keutner, Carsten Westphal, and •Ismail Baltaci
18:15 O 44.11 Graphene growth on SiC(1120) — •Stefanie Rumbke, Florian Speck, and Thomas Seyller
18:15 O 44.12 High quality graphene on boron nitride prepared by polymer free dry transfer and contacting techniques for combined STM and electrical transport measurements — •Tjorven Johnsen, Daniel Montag, Felix Jekat, Martin Grob, Nils Freitag, Peter Nemes-Incze, and Markus Morgenstern
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