Regensburg 2016 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 44: Graphene: Electronic Properties, Structure and Substrate Interaction
O 44.10: Poster
Dienstag, 8. März 2016, 18:15–20:30, Poster E
STM characterization of epitaxial graphene produced by confinement controlled sublimation of SiC — Hermann Kromer1, Cornelis Hilscher1, Richard Hönig1, Christoph Keutner1,2, Carsten Westphal1, 2, and •Ismail Baltaci1 — 1Experimentelle Physik 1 - Technische Universität Dortmund, Otto-Hahn-Str. 4, D-44221 Dortmund, Germany — 2DELTA - Technische Universität Dortmund, Maria-Goeppert-Mayer-Str. 2, D-44221 Dortmund, Germany
Graphene electronics imposes great demands on the material and material processing. The realization of graphene-based electronics requires a homogeneous, controllable and reproducible growth of large-domain graphene layers.
In this study we are focusing on the growth of epitaxial graphene on the Si-face of silicon carbide (SiC). Our aim is to achieve a well controlled growth of high quality graphene layers on a large scale. Therefore we are using the confinement controlled sublimation (CCS) method under ultra high vacuum (UHV) conditions, as well as in an argon atmosphere.
After the preparation, these samples are characterized by scanning tunneling microscopy (STM). STM is an excellent tool to study this system, since its high resolution enables us to examine surfaces down to the atomic level.