Regensburg 2016 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 44: Graphene: Electronic Properties, Structure and Substrate Interaction

O 44.11: Poster

Dienstag, 8. März 2016, 18:15–20:30, Poster E

Graphene growth on SiC(1120) — •Stefanie Rumbke, Florian Speck, and Thomas Seyller — Professur für Technische Physik, TU Chemnitz, Reichenhainer Str. 70, D-09126 Chemnitz, Germany

Epitaxial growth of graphene on SiC(0001) surfaces leads to the formation of the so-called buffer layer, a monolayer of carbon atoms partially bonded to the substrate [1]. This layer is known to be detrimental for the electronic transport properties of graphene [2]. We present a study of graphene growth on SiC(1120) surfaces on which, according to previous work [3], graphene can be grown on top of the substrate without a buffer layer residing at the interface. Prior to graphene growth, samples were hydrogen etched in order to obtain flat surfaces. Systematic studies were carried out to determine the optimal parameters for both hydrogen etching and graphene growth. For hydrogen etching temperature as well as hydrogen flow were varied, for graphene growth temperature and duration of the growth process. The quality of the hydrogen etched surfaces and the graphene layers along with the properties of the graphene were investigated using atomic force microscopy, x-ray photoelectron spectroscopy, low energy electron diffraction and angle-resolved photoelectron spectroscopy. In addition, the impact of hydrogen intercalation on the doping level of graphene on SiC(1120) was investigated.

[1] K. Emtsev, et al., Phys. Rev. B 77, 155303 (2008).

[2] F. Speck, et al., Appl. Phys. Lett. 99, 122106 (2011).

[3] M. Ostler, et al., Phys. Rev. B 88, 085408 (2013).