Regensburg 2016 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 44: Graphene: Electronic Properties, Structure and Substrate Interaction
O 44.8: Poster
Dienstag, 8. März 2016, 18:15–20:30, Poster E
Local transport measurements in Graphene on SiO2 using Kelvin Probe Force Microscopy — Philip Willke1, Christian Möhle1, •Anna Sinterhauf1, Thomas Kotzott1, Hak Ki Yu2,3,4, Alec Wodtke2,3, and Martin Wenderoth1 — 1IV. Physical Institute, University of Göttingen, 37077 Göttingen, Germany — 2Institute for Physical Chemistry, University of Göttingen, 37077 Göttingen, Germany — 3Max Planck Institute for Biophysical Chemistry, 37077 Göttingen, Germany — 4Department of Materials Science & Engineering, Ajou University, Suwon 443-749, Korea
By using Kelvin Probe Force Microscopy with an additional applied electric field we investigate the local voltage drop in graphene on SiO2 under ambient conditions. We are able to quantify the variation of the local sheet resistance and to resolve localized voltage drops at line defects. Our data demonstrates that the resistance of line defects has been overestimated so far. Moreover, we show that different types of wrinkles have the largest resistance. Temperature-dependent measurements show that the local monolayer sheet resistance reflects the macroscopic increase in resistance with temperature while the defect resistance for folded wrinkles is best described by a temperature-independent model which we attribute to interlayer tunneling. This work was supported by the Deutsche Forschungsgemeinschaft (DFG) priority program 1459 Graphene.